Wafer-scale solution-derived molecular gate dielectrics for low-voltage graphene electronics
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208 (United States)
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208 (United States)
- Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, Illinois 60208 (United States)
Graphene field-effect transistors are integrated with solution-processed multilayer hybrid organic-inorganic self-assembled nanodielectrics (SANDs). The resulting devices exhibit low-operating voltage (2 V), negligible hysteresis, current saturation with intrinsic gain >1.0 in vacuum (pressure < 2 × 10{sup −5} Torr), and overall improved performance compared to control devices on conventional SiO{sub 2} gate dielectrics. Statistical analysis of the field-effect mobility and residual carrier concentration demonstrate high spatial uniformity of the dielectric interfacial properties and graphene transistor characteristics over full 3 in. wafers. This work thus establishes SANDs as an effective platform for large-area, high-performance graphene electronics.
- OSTI ID:
- 22293111
- Journal Information:
- Applied Physics Letters, Vol. 104, Issue 8; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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