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Title: Non-hysteretic superconducting quantum interference proximity transistor with enhanced responsivity

This Letter presents fabrication and characterization of an optimized superconducting quantum interference proximity transistor. The present device, characterized by reduced tunnel junction area and shortened normal-metal section, demonstrates no hysteresis at low temperatures as we increased the Josephson inductance of the weak link by decreasing its cross section. It has consequently almost an order of magnitude improved magnetic field responsivity as compared to the earlier design. The modulation of both the current and the voltage across the junction have been measured as a function of magnetic flux piercing the superconducting loop.
Authors:
 [1] ;  [2] ; ;  [1]
  1. O.V. Lounasmaa Laboratory, Aalto University School of Science, POB 13500, FI-00076 AALTO (Finland)
  2. (Iran, Islamic Republic of)
Publication Date:
OSTI Identifier:
22293105
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 8; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; COMPARATIVE EVALUATIONS; ELECTRIC CONTACTS; ELECTRIC POTENTIAL; HYSTERESIS; INDUCTANCE; INTERFERENCE; MAGNETIC FIELDS; MAGNETIC FLUX; SUPERCONDUCTING JUNCTIONS; TEMPERATURE RANGE 0065-0273 K; TRANSISTORS; TUNNEL EFFECT