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Title: Suppression of the thermal hysteresis in magnetocaloric MnAs thin film by highly charged ion bombardment

We present the investigation on the modifications of structural and magnetic properties of MnAs thin film epitaxially grown on GaAs induced by slow highly charged ions bombardment under well-controlled conditions. The ion-induced defects facilitate the nucleation of one phase with respect to the other in the first-order magneto-structural MnAs transition, with a consequent suppression of thermal hysteresis without any significant perturbation on the other structural and magnetic properties. In particular, the irradiated film keeps the giant magnetocaloric effect at room temperature opening new perspective on magnetic refrigeration technology for everyday use.
Authors:
; ; ; ; ; ; ; ; ; ; ; ;  [1] ;  [2]
  1. CNRS, UMR 7588, Institut des NanoSciences de Paris (INSP), F-75005 Paris (France)
  2. (France)
Publication Date:
OSTI Identifier:
22293100
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 8; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; DISTURBANCES; EPITAXY; GALLIUM ARSENIDES; HYSTERESIS; ION BEAMS; IRRADIATION; MAGNETIC PROPERTIES; MANGANESE ARSENIDES; MULTICHARGED IONS; NUCLEATION; REFRIGERATION; TEMPERATURE RANGE 0273-0400 K; THERMODYNAMIC PROPERTIES; THIN FILMS