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Title: Diffusion injected multi-quantum well light-emitting diode structure

The attention towards light-emitting diode (LED) structures based on nanowires, surface plasmon coupled LEDs, and large-area high-power LEDs has been increasing for their potential in increasing the optical output power and efficiency of LEDs. In this work we demonstrate an alternative way to inject charge carriers into the active region of an LED, which is based on completely different current transport mechanism compared to conventional current injection approaches. The demonstrated structure is expected to help overcoming some of the challenges related to current injection with conventional structures. A functioning III-nitride diffusion injected light-emitting diode structure, in which the light-emitting active region is located outside the pn-junction, is realized and characterized. In this device design, the charge carriers are injected into the active region by bipolar diffusion, which could also be utilized to excite otherwise challenging to realize light-emitting structures.
Authors:
; ; ; ;  [1] ; ; ;  [2]
  1. Department of Micro- and Nanosciences, Aalto University, P.O. Box 13500, FI-00076 Aalto (Finland)
  2. Department of Biomedical Engineering and Computational Science, Aalto University, P.O. Box 12200, FI-00076 Aalto (Finland)
Publication Date:
OSTI Identifier:
22293091
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 8; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CHARGE CARRIERS; CURRENTS; DIFFUSION; EFFICIENCY; LIGHT EMITTING DIODES; P-N JUNCTIONS; QUANTUM WELLS; QUANTUM WIRES