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Title: Symmetric reflection line resonator and its quality factor modulation by a two-dimensional electron gas

We have designed and fabricated a half-wavelength reflection line resonator that consists of a pair of coupled microstrip lines on a GaAs/AlGaAs heterostructure. By changing the top gate voltage on a small square with a two-dimensional electron gas under the resonator, the quality factor was tuned over a large range from 2700 to below 600. Apart from being of fundamental interest, this gate modulation technique has the potential for use in on-chip resonator applications.
Authors:
; ; ; ; ; ; ; ;  [1] ;  [2] ;  [3]
  1. Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026 (China)
  2. Department of Physics and Astronomy, University of California at Los Angeles, Los Angeles, California 90095 (United States)
  3. Quantum Nanoelectronics Laboratory, Department of Physics, University of California, Berkeley, California 94720 (United States)
Publication Date:
OSTI Identifier:
22293086
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 8; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM ARSENIDES; ELECTRIC POTENTIAL; ELECTRON GAS; GALLIUM ARSENIDES; MODULATION; QUALITY FACTOR; REFLECTION; RESONATORS; TWO-DIMENSIONAL CALCULATIONS