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Title: Observation of bias-dependent noise sources in a TiO{sub x}/TiO{sub y} bipolar resistive switching frame

We report the conduction features associated with the evolution of oxygen ions (or vacancies) under bias for a TiO{sub x} (oxygen ion-rich)/TiO{sub y} (oxygen ion-deficient) bi-layer cell by identifying low-frequency noise sources. It is believed that a low resistance state enhances the formation of conductive filaments exchanging electrons through a nearest-neighbor hopping process, while a high resistance state (HRS) emphasizes the rupture of conductive filaments inside the insulating TiO{sub x} layer and a reduction/oxidation reaction at the oxide interfaces. The high resolution transmission electron microscope images of as-grown and HRS cells are also discussed.
Authors:
 [1] ; ; ;  [2] ;  [3] ;  [1] ;  [4]
  1. Novel Functional Materials and Devices Laboratory, Department of Physics, The Research Institute for Natural Science, Hanyang University, Seoul 133-791 (Korea, Republic of)
  2. Division of Nano-Scale Semiconductor Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of)
  3. Department of Semiconductor Science, Dongguk University, Seoul 100-715 (Korea, Republic of)
  4. (Korea, Republic of)
Publication Date:
OSTI Identifier:
22293084
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 8; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ELECTRON EXCHANGE; FILAMENTS; IMAGES; INTERFACES; NOISE; OXIDATION; OXYGEN IONS; REDUCTION; RESOLUTION; TITANIUM OXIDES; TRANSMISSION ELECTRON MICROSCOPY; VACANCIES