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Title: Specific methodology for capacitance imaging by atomic force microscopy: A breakthrough towards an elimination of parasitic effects

On the basis of a home-made nanoscale impedance measurement device associated with a commercial atomic force microscope, a specific operating process is proposed in order to improve absolute (in sense of “nonrelative”) capacitance imaging by drastically reducing the parasitic effects due to stray capacitance, surface topography, and sample tilt. The method, combining a two-pass image acquisition with the exploitation of approach curves, has been validated on sets of calibration samples consisting in square parallel plate capacitors for which theoretical capacitance values were numerically calculated.
Authors:
 [1] ;  [2] ; ; ;  [1]
  1. Laboratoire de Génie Électrique de Paris (LGEP), UMR 8507 CNRS-Supélec, Paris-Sud and UPMC Paris 06 Universities, 11 rue Joliot-Curie, Plateau de Moulon, 91192 Gif-sur-Yvette Cedex (France)
  2. (France)
Publication Date:
OSTI Identifier:
22293080
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 8; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; ATOMIC FORCE MICROSCOPY; CALIBRATION; CAPACITANCE; CAPACITORS; IMPEDANCE; MEASURING INSTRUMENTS; NANOSTRUCTURES; PLATES; SURFACES; TOPOGRAPHY