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Title: Poly(methyl methacrylate) as a self-assembled gate dielectric for graphene field-effect transistors

We investigate poly(methyl methacrylate) (PMMA) as a low thermal budget organic gate dielectric for graphene field effect-transistors (GFETs) based on a simple process flow. We show that high temperature baking steps above the glass transition temperature (∼130 °C) can leave a self-assembled, thin PMMA film on graphene, where we get a gate dielectric almost for “free” without additional atomic layer deposition type steps. Electrical characterization of GFETs with PMMA as a gate dielectric yields a dielectric constant of k = 3.0. GFETs with thinner PMMA dielectrics have a lower dielectric constant due to decreased polarization arising from neutralization of dipoles and charged carriers as baking temperatures increase. The leakage through PMMA gate dielectric increases with decreasing dielectric thickness and increasing electric field. Unlike conventional high-k gate dielectrics, such low-k organic gate dielectrics are potentially attractive for devices such as the proposed Bilayer pseudoSpin Field-Effect Transistor or flexible high speed graphene electronics.
Authors:
; ; ; ; ;  [1]
  1. Microelectronics Research Center, University of Texas, Austin, Texas 78758 (United States)
Publication Date:
OSTI Identifier:
22293078
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 8; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; BAKING; CHARGE CARRIERS; DEPOSITION; DIELECTRIC MATERIALS; DIPOLES; ELECTRIC FIELDS; FIELD EFFECT TRANSISTORS; GLASS; GRAPHENE; PERMITTIVITY; PMMA; POLARIZATION; TEMPERATURE RANGE 0400-1000 K; TRANSITION TEMPERATURE