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Title: Reducing disorder in graphene nanoribbons by chemical edge modification

We present electronic transport measurements on etched graphene nanoribbons on silicon dioxide before and after a short hydrofluoric acid (HF) treatment. We report on changes in the transport properties, in particular, in terms of a decreasing transport gap and a reduced doping level after HF dipping. Interestingly, the effective energy gap is nearly unaffected by the HF treatment. Additional measurements on a graphene nanoribbon with lateral graphene gates support strong indications that the HF significantly modifies the edges of the investigated nanoribbons leading to a significantly reduced disorder potential in these graphene nanostructures.
Authors:
; ; ;  [1] ;  [2] ;  [3]
  1. JARA-FIT and II. Institute of Physics, RWTH Aachen University, 52074 Aachen (Germany)
  2. (PGI-8/9), Forschungszentrum Jülich, 52425 Jülich (Germany)
  3. Peter Grünberg Institute (PGI-8/9), Forschungszentrum Jülich, 52425 Jülich (Germany)
Publication Date:
OSTI Identifier:
22293077
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 8; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ELECTRON TRANSFER; ENERGY GAP; GRAPHENE; HYDROFLUORIC ACID; NANOSTRUCTURES; SILICON OXIDES