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Title: Epitaxial growth of metastable multiferroic AlFeO{sub 3} film on SrTiO{sub 3} (111) substrate

GaFeO{sub 3}-type AlFeO{sub 3} is consisted of oxygen octahedra and tetrahedra containing Al and Fe ions and is known to have a non-centrosymmetric polar structure with space group Pna2{sub 1}. We tried to grow epitaxial GaFeO{sub 3}-type AlFeO{sub 3} films on SrTiO{sub 3} (111) substrates by pulsed laser deposition technique. Both the atomic arrangement of close-packed and the atomic distance of the substrate surface played important roles in stabilizing GaFeO{sub 3}-type AlFeO{sub 3} on the substrate. Piezoresponse force microscopy measurements clearly showed that GaFeO{sub 3}-type AlFeO{sub 3} films have ferroelectricity at room temperature. In addition, AlFeO{sub 3} film also showed pinched-like hysteresis loop with T{sub N} ∼ 317 K.
Authors:
; ; ; ; ;  [1]
  1. Materials and Structures Laboratory, Tokyo Institute of Technology, 4259-J2-19 Nagatsuta-cho, Midori-ku, Yokohama 226-8503 (Japan)
Publication Date:
OSTI Identifier:
22293076
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 8; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM COMPOUNDS; ALUMINIUM IONS; ENERGY BEAM DEPOSITION; EPITAXY; GALLIUM COMPOUNDS; HYSTERESIS; IRON IONS; IRON OXIDES; LASER RADIATION; MICROSCOPY; ORTHORHOMBIC LATTICES; OXYGEN; PULSED IRRADIATION; SPACE GROUPS; STRONTIUM TITANATES; TEMPERATURE RANGE 0273-0400 K; THIN FILMS