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Title: Bias current dependence of the spin lifetime in insulating Al{sub 0.3}Ga{sub 0.7}As

The spin lifetime and Hanle signal amplitude dependence on bias current has been investigated in insulating Al{sub 0.3}Ga{sub 0.7}As:Si using a three-terminal Hanle effect geometry. The amplitudes of the Hanle signals are much larger for forward bias than for reverse bias, although the spin lifetimes found are statistically equivalent. The spin resistance-area product shows a strong increase with bias current for reverse bias and small forward bias until 150 μA, beyond which a weak dependence is observed. The spin lifetimes diminish substantially with increasing bias current. The dependence of the spin accumulation and lifetime diminish only moderately with temperature from 5 K to 30 K.
Authors:
; ; ;  [1] ; ; ; ; ;  [2]
  1. Department of Physics, Florida State University, Tallahassee, Florida 32306 (United States)
  2. State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China)
Publication Date:
OSTI Identifier:
22293074
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 8; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM COMPOUNDS; AMPLITUDES; CURRENTS; GALLIUM ARSENIDES; LIFETIME; SIGNALS; SILICON; SPIN