A well-structured metastable ceria surface

Journal Article · Mon Feb 24 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4866667· OSTI ID:22293069

Olbrich, R.; Pieper, H. H.; Oelke, R.; Wilkens, H.; Wollschläger, J.; Zoellner, M. H.; Schroeder, T. ^[1]

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1. IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany)

By the growth of a 180 nm thick film on Si(111), we produce a metastable ceria surface with a morphology dominated by terraced pyramids with an oriented triangular base. Changes in the nanoscale surface morphology and local surface potential due to annealing at temperatures ranging from 300 K to 1150 K in the ultra-high vacuum are studied with non-contact atomic force microscopy and Kelvin probe force microscopy. As the surface is stable in the temperature range of 300 K to 850 K, it is most interesting for applications requiring regular steps with a height of one O-Ce-O triple layer.

• OSTI ID: 22293069
• Journal Information: Applied Physics Letters, Vol. 104, Issue 8; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
ATOMIC FORCE MICROSCOPY
CERIUM OXIDES
CRYSTAL GROWTH
CRYSTAL STRUCTURE
MORPHOLOGY
NANOSTRUCTURES
PRESSURE RANGE MICRO PA
SILICON
SURFACE POTENTIAL
SURFACES
TEMPERATURE RANGE
THIN FILMS