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Title: Thermal interface conductance across a graphene/hexagonal boron nitride heterojunction

We measure thermal transport across a graphene/hexagonal boron nitride (h-BN) interface by electrically heating the graphene and measuring the temperature difference between the graphene and BN using Raman spectroscopy. Because the temperature of the graphene and BN are measured optically, this approach enables nanometer resolution in the cross-plane direction. A temperature drop of 60 K can be achieved across this junction at high electrical powers (14 mW). Based on the temperature difference and the applied power data, we determine the thermal interface conductance of this junction to be 7.4 × 10{sup 6} Wm{sup −2}K{sup −1}, which is below the 10{sup 7}–10{sup 8} Wm{sup −2}K{sup −1} values previously reported for graphene/SiO{sub 2} interface.
Authors:
; ;  [1] ;  [2]
  1. Department of Electrical Engineering, University of Southern California, Los Angeles, California 90089 (United States)
  2. Department of Mechanical Engineering and Texas Materials Institute, University of Texas at Austin, Austin, Texas 78712 (United States)
Publication Date:
OSTI Identifier:
22293068
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 8; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; BORON NITRIDES; ELECTRIC HEATING; GRAPHENE; HETEROJUNCTIONS; INTERFACES; RAMAN SPECTROSCOPY; SILICON OXIDES; THERMAL CONDUCTION