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Title: Low leakage Ru-strontium titanate-Ru metal-insulator-metal capacitors for sub-20 nm technology node in dynamic random access memory

Improved metal-insulator-metal capacitor (MIMCAP) stacks with strontium titanate (STO) as dielectric sandwiched between Ru as top and bottom electrode are shown. The Ru/STO/Ru stack demonstrates clearly its potential to reach sub-20 nm technology nodes for dynamic random access memory. Downscaling of the equivalent oxide thickness, leakage current density (J{sub g}) of the MIMCAPs, and physical thickness of the STO have been realized by control of the Sr/Ti ratio and grain size using a heterogeneous TiO{sub 2}/STO based nanolaminate stack deposition and a two-step crystallization anneal. Replacement of TiN with Ru as both top and bottom electrodes reduces the amount of electrically active defects and is essential to achieve a low leakage current in the MIM capacitor.
Authors:
; ; ; ; ; ; ; ; ;  [1]
  1. Imec, Leuven 3001 (Belgium)
Publication Date:
OSTI Identifier:
22293060
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 8; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CAPACITORS; CRYSTAL DEFECTS; CRYSTALLIZATION; CURRENT DENSITY; DEPOSITION; DIELECTRIC MATERIALS; ELECTRODES; GRAIN SIZE; LEAKAGE CURRENT; LEAKS; STRONTIUM; STRONTIUM TITANATES; THICKNESS; TITANIUM; TITANIUM NITRIDES; TITANIUM OXIDES