skip to main content

SciTech ConnectSciTech Connect

Title: Electron transport and defect structure in highly conducting reactively sputtered ultrathin tin oxide films

Electrical conduction behavior of ultrathin (5–110 nm) SnO{sub 2} films reactively sputtered at 150–400 °C substrate temperatures is presented. The surface roughness studies revealed that the films with lower thickness were smoother (≤0.6 nm). Stoichiometry/defect structure of the films obtained from X-ray photoelectron spectroscopy data and electron mobility are found to be dependent on film thickness and substrate temperature. The observed increase in conductivity of semi-metallic films with decrease in film thickness is attributed to changes in defect structure and surface roughness. Highest value of conductivity of about 715 Ω{sup −1} cm{sup −1} is obtained for 5 nm thick films deposited at 300 °C.
Authors:
; ;  [1]
  1. Thin Film Laboratory, Department of Physics, Indian Institute of Technology Delhi, New Delhi 110016 (India)
Publication Date:
OSTI Identifier:
22293058
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 8; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CRYSTAL DEFECTS; DEPOSITION; ELECTRON MOBILITY; ELECTRON TRANSFER; ELECTRONS; ROUGHNESS; SPUTTERING; STOICHIOMETRY; TEMPERATURE DEPENDENCE; THICKNESS; THIN FILMS; TIN OXIDES; X-RAY PHOTOELECTRON SPECTROSCOPY