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Title: Effect of proton irradiation on AlGaN/GaN high electron mobility transistor off-state drain breakdown voltage

The effect of proton irradiation on the off-state drain breakdown voltage of AlGaN/GaN high electron mobility transistors (HEMTs) grown on Si substrates was studied by irradiating protons from the backside of the samples through via holes fabricated directly under the active area of the HEMTs. There was no degradation of drain current nor enhancement of off-state drain voltage breakdown voltage observed for HEMTs irradiated with 275‚ÄČkeV protons, for which the defects created by the proton irradiation were intentionally placed in the GaN buffer. HEMTs with defects positioned in the 2 dimensional electron gas channel region and AlGaN barrier using 330‚ÄČkeV protons not only showed degradation of both drain current and extrinsic transconductance but also exhibited an improvement of the off-state drain breakdown voltage. Finite-element simulations showed the enhancement of the latter were due to a reduction in electric field strength at the gate edges by introduction of charged defects.
Authors:
; ; ;  [1] ;  [2] ; ;  [3] ;  [4]
  1. Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611 (United States)
  2. Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States)
  3. Department of Electrical and Computer Engineering, University of Florida, Gainesville, Florida 32611 (United States)
  4. Department of Physics, Arizona State University, Tempe, Arizona 85287 (United States)
Publication Date:
OSTI Identifier:
22293056
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 8; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM COMPOUNDS; BREAKDOWN; CRYSTAL DEFECTS; ELECTRIC FIELDS; ELECTRIC POTENTIAL; ELECTRON GAS; ELECTRON MOBILITY; FINITE ELEMENT METHOD; GALLIUM NITRIDES; HOLES; IRRADIATION; PROTONS; SILICON; TRANSISTORS