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Title: 1-nm-thick graphene tri-layer as the ultimate copper diffusion barrier

We demonstrate the thinnest ever reported Cu diffusion barrier, a 1-nm-thick graphene tri-layer. X-ray diffraction patterns and Raman spectra show that the graphene is thermally stable at up to 750 °C against Cu diffusion. Transmission electron microscopy images show that there was no inter-diffusion in the Cu/graphene/Si structure. Raman analyses indicate that the graphene may have degraded into a nanocrystalline structure at 750 °C. At 800 °C, the perfect carbon structure was damaged, and thus the barrier failed. The results of this study suggest that graphene could be the ultimate Cu interconnect diffusion barrier.
Authors:
 [1] ;  [1] ;  [2] ;  [3] ;  [2]
  1. Department of Mechanical Engineering, National Cheng Kung University, 1 University Road, Tainan 701, Taiwan (China)
  2. (China)
  3. Institute of Microelectronics and Electrical Engineering Department, National Cheng Kung University, 1 University Road, Tainan 701, Taiwan (China)
Publication Date:
OSTI Identifier:
22293055
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 8; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; COPPER; CRYSTAL DEFECTS; CRYSTALS; DIFFUSION BARRIERS; GRAPHENE; NANOSTRUCTURES; RAMAN SPECTRA; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION