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Title: Giant intrinsic tunnel magnetoresistance in manganite thin films etched with antidot arrays

Huge intrinsic tunnel magnetoresistance effects at low field are demonstrated in macroscopic La{sub 0.33}Pr{sub 0.34}Ca{sub 0.33}MnO{sub 3} thin films etched with periodic antidot arrays, and a highest magnetoresistance ratio (about 1600%) is achieved at 58‚ÄČK. Such giant tunnel magnetoresistance effect might originate from delicate phase separation and coherent transport under the applied periodic spatial confinement. Strong transport fluctuation is also revealed in such systems due to phase competition. Our findings pave a way to realize tunnel magnetoresistance devices based on electronically phase separated materials with spatial modulations.
Authors:
; ; ; ; ;  [1] ;  [1] ;  [2]
  1. Hefei National Laboratory for Physical Sciences at the Microscale and Department of Physics, University of Science and Technology of China, Hefei 230026 (China)
  2. (China)
Publication Date:
OSTI Identifier:
22293052
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 8; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CONFINEMENT; ETCHING; FLUCTUATIONS; MAGNETORESISTANCE; MANGANESE COMPOUNDS; MODULATION; PERIODICITY; THIN FILMS; TUNNEL EFFECT