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Title: Optically active vacancies in GaN grown on Si substrates probed using a monoenergetic positron beam

Native defects in GaN layers grown on Si substrates by metal organic chemical vapor deposition have been studied using a monoenergetic positron beam. Measurements of Doppler broadening spectra of the annihilation radiation for GaN layers showed that optically active vacancy-type defects were formed in the layers. Charge transition of the defects due to electron capture was found to occur when the layers were irradiated by photons with energy above 2.71 eV. The concentration of such defects increased after 600–800 °C annealing, but the defects have not been annealed out even at 1000 °C. They were identified as Ga-vacancy-type defects, such as complexes between Ga vacancies and carbon impurities, and the relationship between their charge transition and optical properties were discussed.
Authors:
; ;  [1] ; ;  [2] ; ; ;  [3] ;  [4] ;  [5]
  1. Division of Applied Physics, Faculty of Pure and Applied Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573 (Japan)
  2. Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139-4307 (United States)
  3. IQE, 200 John Hancock Road, Taunton, Massachusetts 01581 (United States)
  4. Nanosystem Research Institute “RICS,” National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568 (Japan)
  5. Wide Bandgap Material Group, National Institute for Materials Science, Tsukuba 305-0044 (Japan)
Publication Date:
OSTI Identifier:
22293049
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 8; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; ANNIHILATION; CARBON; CHEMICAL VAPOR DEPOSITION; CONCENTRATION RATIO; CRYSTAL DEFECTS; CRYSTAL GROWTH; DOPPLER BROADENING; ELECTRON CAPTURE; GALLIUM NITRIDES; IMPURITIES; LAYERS; OPTICAL PROPERTIES; ORGANOMETALLIC COMPOUNDS; PHOTONS; POSITRON BEAMS; SILICON; VACANCIES