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Title: Improved metal-insulator-transition characteristics of ultrathin VO{sub 2} epitaxial films by optimized surface preparation of rutile TiO{sub 2} substrates

Key to the growth of epitaxial, atomically thin films is the preparation of the substrates on which they are deposited. Here, we report the growth of atomically smooth, ultrathin films of VO{sub 2} (001), only ∼2 nm thick, which exhibit pronounced metal-insulator transitions, with a change in resistivity of ∼500 times, at a temperature that is close to that of films five times thicker. These films were prepared by pulsed laser deposition on single crystalline TiO{sub 2}(001) substrates that were treated by dipping in acetone, HCl and HF in successive order, followed by an anneal at 700–750  °C in flowing oxygen. This pretreatment removes surface contaminants, TiO{sub 2} defects, and provides a terraced, atomically smooth surface.
Authors:
 [1] ;  [2] ;  [2] ; ; ; ;  [1]
  1. IBM Research-Almaden, San Jose, California 95120 (United States)
  2. (Belgium)
Publication Date:
OSTI Identifier:
22293047
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 8; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CRYSTAL DEFECTS; ELECTRICAL INSULATORS; ENERGY BEAM DEPOSITION; EPITAXY; HYDROCHLORIC ACID; HYDROFLUORIC ACID; LASER RADIATION; METALS; MONOCRYSTALS; PULSED IRRADIATION; RUTILE; SUBSTRATES; SURFACES; THIN FILMS; TITANIUM OXIDES; VANADIUM OXIDES