Improved metal-insulator-transition characteristics of ultrathin VO{sub 2} epitaxial films by optimized surface preparation of rutile TiO{sub 2} substrates
Abstract
Key to the growth of epitaxial, atomically thin films is the preparation of the substrates on which they are deposited. Here, we report the growth of atomically smooth, ultrathin films of VO{sub 2} (001), only ∼2 nm thick, which exhibit pronounced metal-insulator transitions, with a change in resistivity of ∼500 times, at a temperature that is close to that of films five times thicker. These films were prepared by pulsed laser deposition on single crystalline TiO{sub 2}(001) substrates that were treated by dipping in acetone, HCl and HF in successive order, followed by an anneal at 700–750 °C in flowing oxygen. This pretreatment removes surface contaminants, TiO{sub 2} defects, and provides a terraced, atomically smooth surface.
- Authors:
-
- IBM Research-Almaden, San Jose, California 95120 (United States)
- Publication Date:
- OSTI Identifier:
- 22293047
- Resource Type:
- Journal Article
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 104; Journal Issue: 8; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CRYSTAL DEFECTS; ELECTRICAL INSULATORS; ENERGY BEAM DEPOSITION; EPITAXY; HYDROCHLORIC ACID; HYDROFLUORIC ACID; LASER RADIATION; METALS; MONOCRYSTALS; PULSED IRRADIATION; RUTILE; SUBSTRATES; SURFACES; THIN FILMS; TITANIUM OXIDES; VANADIUM OXIDES
Citation Formats
Martens, Koen, ESAT Department, KULeuven, Leuven, IMEC, Kapeldreef 75, Leuven, Aetukuri, Nagaphani, Jeong, Jaewoo, Samant, Mahesh G., and Parkin, Stuart S. P. Improved metal-insulator-transition characteristics of ultrathin VO{sub 2} epitaxial films by optimized surface preparation of rutile TiO{sub 2} substrates. United States: N. p., 2014.
Web. doi:10.1063/1.4866037.
Martens, Koen, ESAT Department, KULeuven, Leuven, IMEC, Kapeldreef 75, Leuven, Aetukuri, Nagaphani, Jeong, Jaewoo, Samant, Mahesh G., & Parkin, Stuart S. P. Improved metal-insulator-transition characteristics of ultrathin VO{sub 2} epitaxial films by optimized surface preparation of rutile TiO{sub 2} substrates. United States. https://doi.org/10.1063/1.4866037
Martens, Koen, ESAT Department, KULeuven, Leuven, IMEC, Kapeldreef 75, Leuven, Aetukuri, Nagaphani, Jeong, Jaewoo, Samant, Mahesh G., and Parkin, Stuart S. P. 2014.
"Improved metal-insulator-transition characteristics of ultrathin VO{sub 2} epitaxial films by optimized surface preparation of rutile TiO{sub 2} substrates". United States. https://doi.org/10.1063/1.4866037.
@article{osti_22293047,
title = {Improved metal-insulator-transition characteristics of ultrathin VO{sub 2} epitaxial films by optimized surface preparation of rutile TiO{sub 2} substrates},
author = {Martens, Koen and ESAT Department, KULeuven, Leuven and IMEC, Kapeldreef 75, Leuven and Aetukuri, Nagaphani and Jeong, Jaewoo and Samant, Mahesh G. and Parkin, Stuart S. P.},
abstractNote = {Key to the growth of epitaxial, atomically thin films is the preparation of the substrates on which they are deposited. Here, we report the growth of atomically smooth, ultrathin films of VO{sub 2} (001), only ∼2 nm thick, which exhibit pronounced metal-insulator transitions, with a change in resistivity of ∼500 times, at a temperature that is close to that of films five times thicker. These films were prepared by pulsed laser deposition on single crystalline TiO{sub 2}(001) substrates that were treated by dipping in acetone, HCl and HF in successive order, followed by an anneal at 700–750 °C in flowing oxygen. This pretreatment removes surface contaminants, TiO{sub 2} defects, and provides a terraced, atomically smooth surface.},
doi = {10.1063/1.4866037},
url = {https://www.osti.gov/biblio/22293047},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 8,
volume = 104,
place = {United States},
year = {Mon Feb 24 00:00:00 EST 2014},
month = {Mon Feb 24 00:00:00 EST 2014}
}