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Title: Influence of hydrogen and hydrogen/methane plasmas on AlN thin films

Polycrystalline aluminum nitride (AlN) thin films are exposed to hydrogen and hydrogen/methane plasmas at different conditions. The latter plays an indispensable role in the subsequent deposition of nanocrystalline diamond thin films on AlN. The changes of AlN properties are investigated by means of Fourier transform infrared (FTIR) and Raman spectroscopies as well as atomic force microscopy. The E{sub 1}(TO) and E{sub 2}{sup 2} phonon mode frequencies blue-shift after the exposure to plasmas. The damping constant of E{sub 1}(TO) phonon, calculated from FTIR transmission spectra using the factorized model of a damped oscillator, and the width of E{sub 2}{sup 2} peak in Raman spectra decrease with increasing substrate temperature till the decomposition of AlN thin film becomes notable. It is proven that these changes are driven by the plasmas as annealing in vacuum does not induce them.
Authors:
; ; ;  [1] ;  [2] ; ;  [1]
  1. Institute for Materials Research (IMO), Hasselt University, B-3590 Diepenbeek (Belgium)
  2. (Belgium)
Publication Date:
OSTI Identifier:
22293046
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 8; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM NITRIDES; ANNEALING; ATOMIC FORCE MICROSCOPY; DECOMPOSITION; DEPOSITION; DIAMONDS; FOURIER TRANSFORM SPECTROMETERS; HYDROGEN; INFRARED SPECTRA; METHANE; NANOSTRUCTURES; OSCILLATORS; PHONONS; PLASMA; POLYCRYSTALS; RAMAN SPECTRA; RAMAN SPECTROSCOPY; THIN FILMS