skip to main content

SciTech ConnectSciTech Connect

Title: Temperature-dependent measurement of Auger recombination in In{sub 0.40}Ga{sub 0.60}N/GaN red-emitting (λ = 630 nm) quantum dots

We have derived the Auger recombination coefficients, as a function of temperature, for In{sub 0.4}Ga{sub 0.6}N/GaN self-organized quantum dots from large-signal modulation measurements made on lasers in which the quantum dots form the gain media. The value of C{sub a} = 1.3 ±0.2 × 10{sup −31} cm{sup 6} s{sup −1} at room temperature and the coefficient decreases with increase of temperature.
Authors:
; ; ;  [1]
  1. Center for Photonics and Multiscale Nanomaterials, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122 (United States)
Publication Date:
OSTI Identifier:
22293043
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 8; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; GALLIUM NITRIDES; LASERS; MODULATION; QUANTUM DOTS; RECOMBINATION; SIGNALS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0273-0400 K