Triangular-barrier quantum rod photodiodes: Their fabrication and detector characteristics

Journal Article · Mon Feb 24 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4867242· OSTI ID:22293042

Ohmori, M.; Kobayashi, Y.; Vitushinskiy, P.; Nakamura, S.; Kojima, T.; Sakaki, H. ^[1]

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1. Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya 468-0034 (Japan)

We have fabricated a GaAs-based triangular-barrier photodiode, in which self-assembled InGaAs quantum rods (Q-rods) are embedded in its barrier region. Transport study at 100 K has shown that electrons start to flow mainly through Q-rods when a bias is set above a threshold. Upon illumination, photo-generated holes are found to accumulate in the middle portion of Q-rods and efficiently lower the local barrier height, yielding the responsivity as high as 10{sup 5} A/W at the incident light of 1 fW.

• OSTI ID: 22293042
• Journal Information: Applied Physics Letters, Vol. 104, Issue 8; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ELECTRONS
GALLIUM ARSENIDES
HOLES
INDIUM ARSENIDES
NANOSTRUCTURES
PHOTODIODES
VISIBLE RADIATION