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Title: Large Fermi energy modulation in graphene transistors with high-pressure O{sub 2}-annealed Y{sub 2}O{sub 3} topgate insulators

We demonstrate a considerable suppression of the low-field leakage through a Y{sub 2}O{sub 3} topgate insulator on graphene by applying high-pressure O{sub 2} at 100 atm during post-deposition annealing (HP-PDA). Consequently, the quantum capacitance measurement for the monolayer graphene reveals the largest Fermi energy modulation (E{sub F} = ∼0.52 eV, i.e., the carrier density of ∼2 × 10{sup 13} cm{sup −2}) in the solid-state topgate insulators reported so far. HP-PDA is the robust method to improve the electrical quality of high-k insulators on graphene.
Authors:
; ; ;  [1]
  1. Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)
Publication Date:
OSTI Identifier:
22293038
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 8; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; CARRIER DENSITY; DEPOSITION; ELECTRICAL INSULATORS; GRAPHENE; LEAKS; OXYGEN; PRESSURE RANGE MEGA PA 10-100; SOLIDS; TRANSISTORS; YTTRIUM OXIDES