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Title: Extremely small test cell structure for resistive random access memory element with removable bottom electrode

We established a method of preparing an extremely small memory cell by fabricating a resistive random access memory (ReRAM) structure on the tip of a cantilever of an atomic force microscope. This structure has the high robustness against the drift of the cantilever, and the effective cell size was estimated to be less than 10 nm in diameter due to the electric field concentration at the tip of the cantilever, which was confirmed using electric field simulation. The proposed structure, which has a removable bottom electrode, enables not only the preparation of a tiny ReRAM structure but also the performance of unique experiments, by making the most of its high robustness against the drift of the cantilever.
Authors:
 [1] ; ;  [1] ;  [2]
  1. Department of Information and Electronics, Graduate School of Engineering, Tottori University, 4-101 Koyama-Minami, Tottori 680-8552 (Japan)
  2. (Japan)
Publication Date:
OSTI Identifier:
22293037
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 8; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; ATOMIC FORCE MICROSCOPY; CONCENTRATION RATIO; ELECTRIC FIELDS; ELECTRODES; MEMORY DEVICES; PERFORMANCE; RANDOMNESS