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Title: Structure and dielectric properties of La{sub x}Hf{sub (1−x)}O{sub y} thin films: The dependence of components

Graphical abstract: - Highlights: • La{sub x}Hf{sub (1−x)}O{sub y} thin films were grown by pulse laser deposition method. • The thin film with 10% La/(La + Hf) atom ratio forms a cubic HfO{sub 2} phase. • The amorphous thin films due to more La introduced have almost same local structure. • The main infrared phonon modes move to lower frequency for the amorphous thin films. • The static dielectric constants of the amorphous thin films increase with La content. - Abstract: La{sub x}Hf{sub (1−x)}O{sub y} (x = 0, 0.1, 0.3, 0.5, 0.7, y=2−(1/2)x) thin films were grown by pulsed laser deposition (PLD) method. The component dependence of the structure and vibration properties of these thin films is studied by combining X-ray diffraction, X-ray absorption fine structure (XAFS) and infrared spectroscopy. The thin film with 10% La/(La + Hf) atom ratio forms a cubic HfO{sub 2} phase and it has the largest static dielectric constant. More La atoms introduced cause amorphous phase formed and the static dielectric constants increase with the La content. Although XAFS indicates that these amorphous thin films have almost same local structures, the infrared phonon modes with most contribution to the static dielectric constant move to lowermore » frequency, which results in the component dependence of the dielectric constant.« less
Authors:
 [1] ;  [2] ;  [1] ;  [3] ; ; ; ;  [1]
  1. National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230029 (China)
  2. Department of Technology and Physics, Zhengzhou University of Light Industry, Zhengzhou, Henan 450002 (China)
  3. Institute of Microelectronics of Chinese Academy of Science, Beijing 100029 (China)
Publication Date:
OSTI Identifier:
22290483
Resource Type:
Journal Article
Resource Relation:
Journal Name: Materials Research Bulletin; Journal Volume: 48; Journal Issue: 7; Other Information: Copyright (c) 2013 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ABSORPTION SPECTROSCOPY; ENERGY BEAM DEPOSITION; FINE STRUCTURE; HAFNIUM OXIDES; INFRARED SPECTRA; LASER RADIATION; PERMITTIVITY; PHONONS; PULSED IRRADIATION; THIN FILMS