skip to main content

Title: Resistive switching phenomena of tungsten nitride thin films with excellent CMOS compatibility

Graphical abstract: - Highlights: • The resistive switching characteristics of WN{sub x} thin films. • Excellent CMOS compatibility WN{sub x} films as a resistive switching material. • Resistive switching mechanism revealed trap-controlled space charge limited conduction. • Good endurance and retention properties over 10{sup 5} cycles, and 10{sup 5} s, respectively - Abstract: We report the resistive switching (RS) characteristics of tungsten nitride (WN{sub x}) thin films with excellent complementary metal-oxide-semiconductor (CMOS) compatibility. A Ti/WN{sub x}/Pt memory cell clearly shows bipolar RS behaviors at a low voltage of approximately ±2.2 V. The dominant conduction mechanisms at low and high resistance states were verified by Ohmic behavior and trap-controlled space-charge-limited conduction, respectively. A conducting filament model by a redox reaction explains the RS behavior in WN{sub x} films. We also demonstrate the memory characteristics during pulse operation, including a high endurance over >10{sup 5} cycles and a long retention time of >10{sup 5} s.
Authors:
; ; ;
Publication Date:
OSTI Identifier:
22290360
Resource Type:
Journal Article
Resource Relation:
Journal Name: Materials Research Bulletin; Journal Volume: 48; Journal Issue: 12; Conference: ISFM 2012: 5. international symposium on functional materials, Perth, WA (Australia), 17-20 Dec 2012; Other Information: Copyright (c) 2013 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; COMPATIBILITY; CURIUM OXIDES; ELECTRICAL PROPERTIES; REDOX REACTIONS; SPUTTERING; THIN FILMS; TUNGSTEN; TUNGSTEN NITRIDES; X-RAY DIFFRACTION