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Title: Carbon nanotube based pressure sensor for flexible electronics

Highlights: • The electromechanical change of vertically aligned carbon nanotubes. • Fabrication of CNT field-effect transistor on flexible substrate. • CNT based FET integrated active pressure sensor. • The integrated device yields an increase in the source-drain current under pressure. - Abstract: A pressure sensor was developed based on an arrangement of vertically aligned carbon nanotubes (VACNTs) supported by a polydimethylsiloxane (PDMS) matrix. The VACNTs embedded in the PDMS matrix were structurally flexible and provided repeated sensing operation due to the high elasticities of both the polymer and the carbon nanotubes (CNTs). The conductance increased in the presence of a loading pressure, which compressed the material and induced contact between neighboring CNTs, thereby producing a dense current path and better CNT/metal contacts. To achieve flexible functional electronics, VACNTs based pressure sensor was integrated with field-effect transistor, which is fabricated using sprayed semiconducting carbon nanotubes on plastic substrate.
Authors:
 [1] ;  [2] ;  [3] ; ;  [4] ;  [1]
  1. Department of Nano Mechanics, Nanomechanical Systems Research Division, Korea Institute of Machinery and Materials, Daejeon 305-343 (Korea, Republic of)
  2. Advanced Nano Technology Ltd., Seoul 132-710 (Korea, Republic of)
  3. Department of Mechanical Engineering, Korea Advanced Institute of Science and Technology, Daejeon 305-701 (Korea, Republic of)
  4. SKKU Advanced Institute of Nanotechnology (SAINT), Department of Energy Science and School of Mechanical Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do 440-746 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22290354
Resource Type:
Journal Article
Resource Relation:
Journal Name: Materials Research Bulletin; Journal Volume: 48; Journal Issue: 12; Conference: ISFM 2012: 5. international symposium on functional materials, Perth, WA (Australia), 17-20 Dec 2012; Other Information: Copyright (c) 2013 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CARBON NANOTUBES; ELASTICITY; ELECTRICAL PROPERTIES; FIELD EFFECT TRANSISTORS; MICROSTRUCTURE; PLASTICS; SUBSTRATES