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Title: Room temperature multiferroic properties of (Bi{sub 0.95}La{sub 0.05})(Fe{sub 0.97}Mn{sub 0.03})O{sub 3}/NiFe{sub 2}O{sub 4} double layered thin film

Graphical abstract: - Highlights: • Chemical solution deposition of (Bi{sub 0.95}La{sub 0.05})(Fe{sub 0.97}Mn{sub 0.03})O{sub 3}–NiFe{sub 2}O{sub 4} double layered thin film. • Studies on structural, electrical and multiferroic properties. • NiFe{sub 2}O{sub 4} acts as both resistive buffer layer and magnetic source. - Abstract: (Bi{sub 0.95}La{sub 0.05})(Fe{sub 0.97}Mn{sub 0.03})O{sub 3}/NiFe{sub 2}O{sub 4} double layered thin film was prepared on a Pt(111)/Ti/SiO{sub 2}/Si(100) substrate by a chemical solution deposition method. X-ray diffraction and Raman scattering spectroscopy studies confirmed the formation of the distorted rhombohedral perovskite and the inverse spinel cubic structures for the (Bi{sub 0.95}La{sub 0.05})(Fe{sub 0.97}Mn{sub 0.03})O{sub 3}/NiFe{sub 2}O{sub 4} double layered thin film. The (Bi{sub 0.95}La{sub 0.05})(Fe{sub 0.97}Mn{sub 0.03})O{sub 3}/NiFe{sub 2}O{sub 4} double layered thin film exhibited well saturated ferromagnetic (2 M{sub r} of 18.1 emu/cm{sup 3} and 2H{sub c} of 0.32 kOe at 20 kOe) and ferroelectric (2P{sub r} of 60 μC/cm{sup 2} and 2E{sub c} of 813 kV/cm at 866 kV/cm) hysteresis loops with low order of leakage current density (4.5 × 10{sup −6} A/cm{sup 2} at an applied electric field of 100 kV/cm), which suggest the ferroelectric and ferromagnetic multi-layers applications in real devices.
Authors:
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Publication Date:
OSTI Identifier:
22285199
Resource Type:
Journal Article
Resource Relation:
Journal Name: Materials Research Bulletin; Journal Volume: 48; Journal Issue: 11; Other Information: Copyright (c) 2013 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ELECTRICAL PROPERTIES; FERROELECTRIC MATERIALS; LAYERS; LEAKAGE CURRENT; MAGNETIC PROPERTIES; PEROVSKITE; RAMAN EFFECT; SILICON OXIDES; SPECTROSCOPY; TEMPERATURE RANGE 0273-0400 K; THIN FILMS; TRIGONAL LATTICES; X-RAY DIFFRACTION