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Title: Crucial role of implanted atoms on dynamic defect annealing in ZnO

Processes of defect formation in radiation hard semiconductors exhibiting efficient dynamic annealing are different from those in amorphizible ones, and the latter are generally more well-studied. In the present work, we investigate structural disorder in wurtzite ZnO, which is a radiation hard material, implanted with different ions at room temperature and 15 K. The sample analysis was undertaken by Rutherford backscattering/channeling spectrometry performed in-situ without changing the sample temperature. The fluence dependence of bulk disorder exhibits the so-called IV-stage evolution, where the high fluence regime is characterized by both a strong influence on the damage build-up by the ion type and a reverse temperature effect. A straightforward methodology is demonstrated to differentiate between the contributions of pure ballistic and ion-defect reaction processes in the damage formation.
Authors:
; ;  [1] ;  [2]
  1. Department of Physics, Centre for Materials Science and Nanotechnology, University of Oslo, P.O. Box 1048 Blindern, N-0316 Oslo (Norway)
  2. Friedrich-Schiller-Universität Jena, Institut für Festkörperphysik, Max-Wien-Platz 1, 07743 Jena (Germany)
Publication Date:
OSTI Identifier:
22283304
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 5; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; ATOMS; CHANNELING; CRYSTAL DEFECTS; IONS; PHYSICAL RADIATION EFFECTS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTOR MATERIALS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0000-0013 K; TEMPERATURE RANGE 0273-0400 K; ZINC OXIDES