Hard x-ray photoelectron spectroscopy study of Ge{sub 2}Sb{sub 2}Te{sub 5}; as-deposited amorphous, crystalline, and laser-reamorphized
- Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, 305-8562 Ibaraki (Japan)
- Synchrotron x-ray Station at SPring-8, National Institute for Materials Science, Kouto 1-1-1, Sayo-cho, Sayo-gun, Hyogo 679-5198 (Japan)
- SPring-8 Service Co. Ltd., 1-1-1 Kouto, Sayo, Hyogo 679-5148 (Japan)
- Hiroshima Synchrotron Radiation Center, Hiroshima University Kagamiyama 2-313, Higashi-Hiroshima, Hiroshima 739-0046 (Japan)
We have investigated the electronic structure of as-deposited, crystalline, and laser-reamorphized Ge{sub 2}Sb{sub 2}Te{sub 5} using high resolution, hard x-ray photoemission spectroscopy. A shift in the Fermi level as well as a broadening of the spectral features in the valence band and the Ge 3d level between the amorphous and crystalline state is observed. Upon amorphization, Ge 3d and Sb 4d spectra show a surprisingly small breaking of resonant bonds and changes in the bonding character as evidenced by the very similar density of states in all cases.
- OSTI ID:
- 22283296
- Journal Information:
- Applied Physics Letters, Vol. 104, Issue 6; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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