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Title: Spin counting in electrically detected magnetic resonance via low-field defect state mixing

The work herein describes a method that allows one to measure paramagnetic defect densities in semiconductor and insulator based devices with electrically detected magnetic resonance (EDMR). The method is based upon the mixing of defect states which results from the dipolar coupling of paramagnetic sites at low magnetic fields. We demonstrate the measurement method with spin dependent tunneling in thin film dielectrics; however, the method should be equally applicable to paramagnetic defect density measurements in semiconductors via the more commonly utilized EDMR technique called spin dependent recombination.
Authors:
;  [1]
  1. The Pennsylvania State University, University Park, Pennsylvania 16802 (United States)
Publication Date:
OSTI Identifier:
22283291
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 9; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; COUPLING; CRYSTAL DEFECTS; DENSITY; DIELECTRIC MATERIALS; MAGNETIC FIELDS; MAGNETIC RESONANCE; PARAMAGNETISM; RECOMBINATION; SEMICONDUCTOR MATERIALS; SPIN; THIN FILMS; TUNNEL EFFECT