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Title: Modeling of capacitance transients of thin-film solar cells: A valuable tool to gain information on perturbing layers or interfaces

Thin-film electronic and photovoltaic devices often comprise, in addition to the anticipated p-n junctions, additional non-ideal ohmic contacts between layers. This may give rise to additional signals in capacitance spectroscopy techniques that are not directly related to defects in the structure. In this paper, we present a fitting algorithm for transient signals arising from such an additional junction. The fitting results are in excellent agreement with the diode characteristics extracted from static measurements on individual components. Finally, the algorithm is applied for determining the barriers associated with anomalous signals reported for selected CuIn{sub 1–x}Ga{sub x}Se{sub 2} and CdTe solar cells.
Authors:
; ;  [1] ; ;  [2]
  1. Department of Solid State Sciences, Ghent University, Krijgslaan 281-S1, 9000 Gent (Belgium)
  2. Laboratory for Chemical Technology (LCT), Ghent University, Krijgslaan 281-S5, 9000 Gent (Belgium)
Publication Date:
OSTI Identifier:
22283284
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 5; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALGORITHMS; CADMIUM TELLURIDES; CAPACITANCE; COMPUTERIZED SIMULATION; COPPER COMPOUNDS; GAIN; GALLIUM SELENIDES; HETEROJUNCTIONS; INDIUM COMPOUNDS; INTERFACES; LAYERS; PHOTOVOLTAIC EFFECT; P-N JUNCTIONS; SOLAR CELLS; SPECTROSCOPY; THIN FILMS