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Title: Local magnetoresistance in Fe/MgO/Si lateral spin valve at room temperature

Room temperature local magnetoresistance in two-terminal scheme is reported. By employing 1.6 nm-thick MgO tunnel barrier, spin injection efficiency is increased, resulting in large non-local magnetoresistance. The magnitude of the non-local magnetoresistance is estimated to be 0.0057 Ω at room temperature. As a result, a clear rectangle signal is observed in local magnetoresistance measurement even at room temperature. We also investigate the origin of local magnetoresistance by measuring the spin accumulation voltage of each contact separately.
Authors:
; ;  [1] ;  [2] ; ;  [3] ;  [3] ;  [4]
  1. Advanced Technology Development Center, TDK Corporation, Chiba (Japan)
  2. AIT, Akita Industrial Technology Center, Akita (Japan)
  3. Graduate School of Engineering Science, Osaka University, Toyonaka (Japan)
  4. (Japan)
Publication Date:
OSTI Identifier:
22283277
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 5; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; EFFICIENCY; ELECTRIC POTENTIAL; HETEROJUNCTIONS; INTERFACES; IRON; MAGNESIUM OXIDES; MAGNETORESISTANCE; SILICON; SPIN; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0273-0400 K