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Title: Growth and characterization of Sc-doped EuO thin films

The preparation of 3d-transition metal-doped EuO thin films by molecular beam epitaxy is investigated using the example of Sc doping. The Sc-doped EuO samples display a good crystalline structure, despite the relatively small ionic radius of the dopant. The Sc doping leads to an enhancement of the Curie temperature to up to 125‚ÄČK, remarkably similar to previous observations on lanthanide-doped EuO.
Authors:
; ; ; ; ;  [1]
  1. Max Planck Institute for Chemical Physics of Solids, Nöthnitzer Str. 40, 01187 Dresden (Germany)
Publication Date:
OSTI Identifier:
22283276
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 5; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CRYSTAL GROWTH; CRYSTAL STRUCTURE; CURIE POINT; DOPED MATERIALS; EUROPIUM OXIDES; MOLECULAR BEAM EPITAXY; SCANDIUM COMPOUNDS; THIN FILMS