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Title: Inverse spin Hall effect induced by spin pumping into semiconducting ZnO

The inverse spin Hall effect (ISHE) of n-type semiconductor ZnO thin films with weak spin-orbit coupling has been observed by utilizing the spin pumping method. In the ferromagnetic resonance condition, the spin pumping driven by the dynamical exchange interaction of a permalloy film injects a pure spin current into the adjacent ZnO layer. This spin current gives rise to a DC voltage through the ISHE in the ZnO layer, and the DC voltage is proportional to the microwave excitation power. The effect is sizeable even when the spin backflow is considered.
Authors:
 [1] ;  [2] ;  [1] ;  [3] ;  [4] ;  [4] ;  [3] ;  [5] ;  [3] ;  [1] ;  [3]
  1. Institute of Physics, Academia Sinica, Taipei 11529, Taiwan (China)
  2. Graduate Institute of Applied Physics, National Chengchi University, Taipei 11605, Taiwan (China)
  3. (China)
  4. Department of Physics, National Cheng Kung University, Tainan 70101, Taiwan (China)
  5. Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan (China)
Publication Date:
OSTI Identifier:
22283274
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 5; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; EXCHANGE INTERACTIONS; EXCITATION; FERROMAGNETIC RESONANCE; HALL EFFECT; LAYERS; L-S COUPLING; MICROWAVE RADIATION; PERMALLOY; PUMPING; SEMICONDUCTOR MATERIALS; SPIN; THIN FILMS; ZINC OXIDES