Scanning tunneling microscopic and spectroscopic studies on a crystalline silica monolayer epitaxially formed on hexagonal SiC(0001{sup ¯}) surfaces
- Department of Electronics Engineering and Computer Science, Fukuoka University, Fukuoka 814-0180 (Japan)
- Laser and Synchrotron Research Center, Institute for Solid State Physics, University of Tokyo, Chiba 277-8581 (Japan)
- Nanoscale Science Division, Institute for Solid State Physics, University of Tokyo, Chiba 277-8581 (Japan)
- Department of Applied Quantum Physics and Nuclear Engineering, Kyushu University, Fukuoka 819-0395 (Japan)
An epitaxial silicon-oxide monolayer of chemical composition of Si{sub 2}O{sub 3} (the Si{sub 2}O{sub 3} layer) formed on hexagonal SiC(0001{sup ¯}) surfaces has been observed by scanning tunneling microscopy (STM). Filled- and empty-state STM images with atomic resolution support the previously reported model. Typical structural defects in the Si{sub 2}O{sub 3} layer are found to be missing SiO{sub n} (n = 1, 2, 3) molecules. The band gap of the Si{sub 2}O{sub 3} layer obtained by point tunneling spectroscopy is 5.5±0.5 eV, exhibiting considerable narrowing from that of bulk SiO{sub 2}, 8.9 eV. It is proposed that the Si{sub 2}O{sub 3} layer is suitable as a relevant interface material for formation of SiC-based metal-oxide-semiconductor devices.
- OSTI ID:
- 22283269
- Journal Information:
- Applied Physics Letters, Vol. 104, Issue 5; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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