skip to main content

SciTech ConnectSciTech Connect

Title: Scanning tunneling microscopic and spectroscopic studies on a crystalline silica monolayer epitaxially formed on hexagonal SiC(0001{sup ¯}) surfaces

An epitaxial silicon-oxide monolayer of chemical composition of Si{sub 2}O{sub 3} (the Si{sub 2}O{sub 3} layer) formed on hexagonal SiC(0001{sup ¯}) surfaces has been observed by scanning tunneling microscopy (STM). Filled- and empty-state STM images with atomic resolution support the previously reported model. Typical structural defects in the Si{sub 2}O{sub 3} layer are found to be missing SiO{sub n} (n = 1, 2, 3) molecules. The band gap of the Si{sub 2}O{sub 3} layer obtained by point tunneling spectroscopy is 5.5±0.5 eV, exhibiting considerable narrowing from that of bulk SiO{sub 2}, 8.9 eV. It is proposed that the Si{sub 2}O{sub 3} layer is suitable as a relevant interface material for formation of SiC-based metal-oxide-semiconductor devices.
Authors:
; ;  [1] ; ;  [2] ; ; ;  [3] ; ;  [4]
  1. Department of Electronics Engineering and Computer Science, Fukuoka University, Fukuoka 814-0180 (Japan)
  2. Laser and Synchrotron Research Center, Institute for Solid State Physics, University of Tokyo, Chiba 277-8581 (Japan)
  3. Nanoscale Science Division, Institute for Solid State Physics, University of Tokyo, Chiba 277-8581 (Japan)
  4. Department of Applied Quantum Physics and Nuclear Engineering, Kyushu University, Fukuoka 819-0395 (Japan)
Publication Date:
OSTI Identifier:
22283269
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 5; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABSORPTION SPECTROSCOPY; ELECTRONIC STRUCTURE; ENERGY GAP; EPITAXY; HEXAGONAL LATTICES; INTERFACES; LAYERS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR DEVICES; SILICON CARBIDES; SILICON OXIDES; SURFACES; TUNNEL EFFECT