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Title: Scanning tunneling microscopic and spectroscopic studies on a crystalline silica monolayer epitaxially formed on hexagonal SiC(0001{sup ¯}) surfaces

Abstract

An epitaxial silicon-oxide monolayer of chemical composition of Si{sub 2}O{sub 3} (the Si{sub 2}O{sub 3} layer) formed on hexagonal SiC(0001{sup ¯}) surfaces has been observed by scanning tunneling microscopy (STM). Filled- and empty-state STM images with atomic resolution support the previously reported model. Typical structural defects in the Si{sub 2}O{sub 3} layer are found to be missing SiO{sub n} (n = 1, 2, 3) molecules. The band gap of the Si{sub 2}O{sub 3} layer obtained by point tunneling spectroscopy is 5.5±0.5 eV, exhibiting considerable narrowing from that of bulk SiO{sub 2}, 8.9 eV. It is proposed that the Si{sub 2}O{sub 3} layer is suitable as a relevant interface material for formation of SiC-based metal-oxide-semiconductor devices.

Authors:
; ;  [1]; ;  [2]; ; ;  [3]; ;  [4]
  1. Department of Electronics Engineering and Computer Science, Fukuoka University, Fukuoka 814-0180 (Japan)
  2. Laser and Synchrotron Research Center, Institute for Solid State Physics, University of Tokyo, Chiba 277-8581 (Japan)
  3. Nanoscale Science Division, Institute for Solid State Physics, University of Tokyo, Chiba 277-8581 (Japan)
  4. Department of Applied Quantum Physics and Nuclear Engineering, Kyushu University, Fukuoka 819-0395 (Japan)
Publication Date:
OSTI Identifier:
22283269
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 104; Journal Issue: 5; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABSORPTION SPECTROSCOPY; ELECTRONIC STRUCTURE; ENERGY GAP; EPITAXY; HEXAGONAL LATTICES; INTERFACES; LAYERS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR DEVICES; SILICON CARBIDES; SILICON OXIDES; SURFACES; TUNNEL EFFECT

Citation Formats

Tochihara, Hiroshi, Suzuki, Takayuki, Yagyu, Kazuma, Shirasawa, Tetsuroh, Takahashi, Toshio, Miyamachi, Toshio, Yoshizawa, Shunsuke, Komori, Fumio, Kajiwara, Takashi, and Tanaka, Satoru. Scanning tunneling microscopic and spectroscopic studies on a crystalline silica monolayer epitaxially formed on hexagonal SiC(0001{sup ¯}) surfaces. United States: N. p., 2014. Web. doi:10.1063/1.4863753.
Tochihara, Hiroshi, Suzuki, Takayuki, Yagyu, Kazuma, Shirasawa, Tetsuroh, Takahashi, Toshio, Miyamachi, Toshio, Yoshizawa, Shunsuke, Komori, Fumio, Kajiwara, Takashi, & Tanaka, Satoru. Scanning tunneling microscopic and spectroscopic studies on a crystalline silica monolayer epitaxially formed on hexagonal SiC(0001{sup ¯}) surfaces. United States. https://doi.org/10.1063/1.4863753
Tochihara, Hiroshi, Suzuki, Takayuki, Yagyu, Kazuma, Shirasawa, Tetsuroh, Takahashi, Toshio, Miyamachi, Toshio, Yoshizawa, Shunsuke, Komori, Fumio, Kajiwara, Takashi, and Tanaka, Satoru. 2014. "Scanning tunneling microscopic and spectroscopic studies on a crystalline silica monolayer epitaxially formed on hexagonal SiC(0001{sup ¯}) surfaces". United States. https://doi.org/10.1063/1.4863753.
@article{osti_22283269,
title = {Scanning tunneling microscopic and spectroscopic studies on a crystalline silica monolayer epitaxially formed on hexagonal SiC(0001{sup ¯}) surfaces},
author = {Tochihara, Hiroshi and Suzuki, Takayuki and Yagyu, Kazuma and Shirasawa, Tetsuroh and Takahashi, Toshio and Miyamachi, Toshio and Yoshizawa, Shunsuke and Komori, Fumio and Kajiwara, Takashi and Tanaka, Satoru},
abstractNote = {An epitaxial silicon-oxide monolayer of chemical composition of Si{sub 2}O{sub 3} (the Si{sub 2}O{sub 3} layer) formed on hexagonal SiC(0001{sup ¯}) surfaces has been observed by scanning tunneling microscopy (STM). Filled- and empty-state STM images with atomic resolution support the previously reported model. Typical structural defects in the Si{sub 2}O{sub 3} layer are found to be missing SiO{sub n} (n = 1, 2, 3) molecules. The band gap of the Si{sub 2}O{sub 3} layer obtained by point tunneling spectroscopy is 5.5±0.5 eV, exhibiting considerable narrowing from that of bulk SiO{sub 2}, 8.9 eV. It is proposed that the Si{sub 2}O{sub 3} layer is suitable as a relevant interface material for formation of SiC-based metal-oxide-semiconductor devices.},
doi = {10.1063/1.4863753},
url = {https://www.osti.gov/biblio/22283269}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 5,
volume = 104,
place = {United States},
year = {Mon Feb 03 00:00:00 EST 2014},
month = {Mon Feb 03 00:00:00 EST 2014}
}