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Title: Observation of the in-plane spin-dephasing anisotropy in [111]-grown GaAs/AlGaAs quantum well

The electron density and temperature dependent in-plane spin-dephasing anisotropy in [111]-grown GaAs quantum well (QW) has been investigated by time-resolved magneto-Kerr rotation technique. Due to the specific symmetry of [111]-grown quantum well, the in-plane Rashba and linear Dresselhaus effective spin-orbit magnetic field is parallel to each other for electron wave vectors in all directions. However, an obvious in-plane spin-dephasing anisotropy comparing [2{sup ¯}11] with [01{sup ¯}1] crystalline orientations has been observed and discussed in this work. Our results demonstrate the innegligible spin dephasing channel through inhomogeneous broadening induced by the out-of-plane non-linear Dresselhaus field, which arises naturally from the C{sub 3} symmetry of [111]-grown GaAs QW.
Authors:
; ; ; ; ;  [1]
  1. State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China)
Publication Date:
OSTI Identifier:
22283254
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 5; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; ALUMINIUM ARSENIDES; ANISOTROPY; COMPARATIVE EVALUATIONS; CRYSTAL GROWTH; ELECTRON DENSITY; GALLIUM ARSENIDES; L-S COUPLING; MAGNETIC FIELDS; NONLINEAR PROBLEMS; QUANTUM WELLS; ROTATION; SPIN; TEMPERATURE DEPENDENCE; TIME RESOLUTION