skip to main content

SciTech ConnectSciTech Connect

Title: How much better are InGaN/GaN nanodisks than quantum wells—Oscillator strength enhancement and changes in optical properties

We show over 100-fold enhancement of the exciton oscillator strength as the diameter of an InGaN nanodisk in a GaN nanopillar is reduced from a few micrometers to less than 40 nm, corresponding to the quantum dot limit. The enhancement results from significant strain relaxation in nanodisks less than 100 nm in diameter. Meanwhile, the radiative decay rate is only improved by 10 folds due to strong reduction of the local density of photon states in small nanodisks. Further increase in the radiative decay rate can be achieved by engineering the local density of photon states, such as adding a dielectric coating.
Authors:
; ;  [1] ; ; ;  [2]
  1. Department of Physics, University of Michigan, 450 Church Street, Ann Arbor, Michigan 48109 (United States)
  2. Department of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Ave., Ann Arbor, Michigan 48109 (United States)
Publication Date:
OSTI Identifier:
22283253
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 5; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; DIELECTRIC MATERIALS; ENERGY-LEVEL DENSITY; GALLIUM NITRIDES; INDIUM COMPOUNDS; OPTICAL PROPERTIES; OSCILLATOR STRENGTHS; PHOTONS; QUANTUM DOTS; RELAXATION; STRAINS