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Title: Electronic-state-controlled reset operation in quantum dot resonant-tunneling single-photon detectors

The authors present a systematic study of an introduced reset operation on quantum dot (QD) single photon detectors operating at 77‚ÄČK. The detectors are based on an AlAs/GaAs/AlAs double-barrier resonant tunneling diode with an adjacent layer of self-assembled InAs QDs. Sensitive single-photon detection in high (dI)/(dV) region with suppressed current fluctuations is achieved. The dynamic detection range is extended up to at least 10{sup 4} photons/s for sensitive imaging applications by keeping the device far from saturation by employing an appropriate reset frequency.
Authors:
;  [1] ;  [2] ; ;  [3]
  1. Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai 200241 (China)
  2. State Key Laboratory of Surface Physics and Institute of Advanced Materials, Fudan University, Shanghai 200433 (China)
  3. Center for Opto-Electronic Convergence Systems, Institute of Science and Technology, Seoul 130-650 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22283250
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 5; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; ALUMINIUM ARSENIDES; DETECTION; ELECTRIC CURRENTS; FLUCTUATIONS; GALLIUM ARSENIDES; INDIUM ARSENIDES; LAYERS; PHOTONS; QUANTUM DOTS; TUNNEL DIODES; TUNNEL EFFECT