Origin of InGaN/GaN light-emitting diode efficiency improvements using tunnel-junction-cascaded active regions

Journal Article · Mon Feb 03 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4864311· OSTI ID:22283244

Piprek, Joachim ^[1]

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1. NUSOD Institute LLC, P.O. Box 7204, Newark, Delaware 19714 (United States)

This Letter investigates the efficiency enhancement achieved by tunnel junction insertion into the InGaN/GaN multi-quantum well (MQW) active region of blue light emitting diodes (LEDs). The peak quantum efficiency of such LED exceeds 100%, but the maximum wall-plug efficiency (WPE) hardly changes. However, due to the increased bias, the WPE peaks at much higher input power, i.e., the WPE droop is significantly delayed, and the output power is strongly enhanced. The main physical reason for this improvement lies in the non-uniform vertical carrier distribution typically observed within InGaN MQWs.

• OSTI ID: 22283244
• Journal Information: Applied Physics Letters, Vol. 104, Issue 5; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
77 NANOSCIENCE AND NANOTECHNOLOGY
GALLIUM NITRIDES
HETEROJUNCTIONS
INDIUM COMPOUNDS
LIGHT EMITTING DIODES
QUANTUM EFFICIENCY
QUANTUM WELLS
TUNNEL EFFECT