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Title: Origin of InGaN/GaN light-emitting diode efficiency improvements using tunnel-junction-cascaded active regions

This Letter investigates the efficiency enhancement achieved by tunnel junction insertion into the InGaN/GaN multi-quantum well (MQW) active region of blue light emitting diodes (LEDs). The peak quantum efficiency of such LED exceeds 100%, but the maximum wall-plug efficiency (WPE) hardly changes. However, due to the increased bias, the WPE peaks at much higher input power, i.e., the WPE droop is significantly delayed, and the output power is strongly enhanced. The main physical reason for this improvement lies in the non-uniform vertical carrier distribution typically observed within InGaN MQWs.
Authors:
 [1]
  1. NUSOD Institute LLC, P.O. Box 7204, Newark, Delaware 19714 (United States)
Publication Date:
OSTI Identifier:
22283244
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 5; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; GALLIUM NITRIDES; HETEROJUNCTIONS; INDIUM COMPOUNDS; LIGHT EMITTING DIODES; QUANTUM EFFICIENCY; QUANTUM WELLS; TUNNEL EFFECT