skip to main content

SciTech ConnectSciTech Connect

Title: InAs quantum dot morphology after capping with In, N, Sb alloyed thin films

Using a thin capping layer to engineer the structural and optical properties of InAs/GaAs quantum dots (QDs) has become common practice in the last decade. Traditionally, the main parameter considered has been the strain in the QD/capping layer system. With the advent of more exotic alloys, it has become clear that other mechanisms significantly alter the QD size and shape as well. Larger bond strengths, surfactants, and phase separation are known to act on QD properties but are far from being fully understood. In this study, we investigate at the atomic scale the influence of these effects on the morphology of capped QDs with cross-sectional scanning tunneling microscopy. A broad range of capping materials (InGaAs, GaAsSb, GaAsN, InGaAsN, and GaAsSbN) are compared. The QD morphology is related to photoluminescence characteristics.
Authors:
;  [1] ; ;  [2]
  1. Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, NL-5600 MB Eindhoven (Netherlands)
  2. Institute for Systems based on Optoelectronics and Microtechnology (ISOM), Universidad Politecnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain)
Publication Date:
OSTI Identifier:
22283238
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 5; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; ANTIMONIDES; COMPARATIVE EVALUATIONS; GALLIUM ARSENIDES; INDIUM ARSENIDES; LAYERS; MORPHOLOGY; NITRIDES; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; QUANTUM DOTS; SCANNING TUNNELING MICROSCOPY; STRAINS; THIN FILMS