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Title: Fabrication of a single layer graphene by copper intercalation on a SiC(0001) surface

Cu atoms deposited on a zero layer graphene grown on a SiC(0001) substrate, intercalate between the zero layer graphene and the SiC substrate after the thermal annealing above 600 °C, forming a Cu-intercalated single layer graphene. On the Cu-intercalated single layer graphene, a graphene lattice with superstructure due to moiré pattern is observed by scanning tunneling microscopy, and specific linear dispersion at the K{sup ¯} point as well as a characteristic peak in a C{sub 1s} core level spectrum, which is originated from a free-standing graphene, is confirmed by photoemission spectroscopy. The Cu-intercalated single layer graphene is found to be n-doped.
Authors:
; ; ;  [1] ; ;  [2] ;  [3]
  1. Department of Electronics Engineering and Computer Science, Fukuoka University, Fukuoka 814-0180 (Japan)
  2. Department of Applied Physics, Fukuoka University, Fukuoka 814-0180 (Japan)
  3. Synchrotron Light Application Center, Saga University, 1 Honjo, Saga 840-8502 (Japan)
Publication Date:
OSTI Identifier:
22283237
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 5; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; CLATHRATES; COPPER; CRYSTAL STRUCTURE; DOPED MATERIALS; FABRICATION; GRAPHENE; LAYERS; PHOTOEMISSION; SCANNING TUNNELING MICROSCOPY; SILICON CARBIDES; SUBSTRATES; SURFACES