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Title: 3 ns single-shot read-out in a quantum dot-based memory structure

Fast read-out of two to six charges per dot from the ground and first excited state in a quantum dot (QD)-based memory is demonstrated using a two-dimensional electron gas. Single-shot measurements on modulation-doped field-effect transistor structures with embedded InAs/GaAs QDs show read-out times as short as 3 ns. At low temperature (T = 4.2 K) this read-out time is still limited by the parasitics of the setup and the device structure. Faster read-out times and a larger read-out signal are expected for an improved setup and device structure.
Authors:
;  [1] ; ; ;  [2]
  1. Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstrasse 36, 10623 Berlin (Germany)
  2. Faculty of Physics and CENIDE, Universität Duisburg-Essen, Lotharstrasse 1, 47048 Duisburg (Germany)
Publication Date:
OSTI Identifier:
22283234
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 5; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; DOPED MATERIALS; ELECTRON GAS; EXCITED STATES; FIELD EFFECT TRANSISTORS; GALLIUM ARSENIDES; HETEROJUNCTIONS; INDIUM ARSENIDES; MODULATION; QUANTUM DOTS; READOUT SYSTEMS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0000-0013 K