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Title: Nanosecond switching in GeSe phase change memory films by atomic force microscopy

Nanosecond scale threshold switching is investigated with conducting atomic force microscopy (AFM) for an amorphous GeSe film. Switched bits exhibit 2–3 orders of magnitude variations in conductivity, as demonstrated in phase change based memory devices. Through the nm-scale AFM probe, this crystallization was achieved with pulse durations of as low as 15 ns, the fastest reported with scanning probe based methods. Conductance AFM imaging of the switched bits further reveals correlations between the switched volume, pulse amplitude, and pulse duration. The influence of film heterogeneities on switching is also directly detected, which is of tremendous importance for optimal device performance.
Authors:
;  [1] ; ;  [2] ;  [3] ; ;  [4]
  1. Department of Materials Science and Engineering, 97 North Eagleville Road, Unit 3136, Storrs, Connecticut 06269-3136 (United States)
  2. Department of Physics, Lancaster University, Lancaster LA1 4YB (United Kingdom)
  3. Department of Materials Science and Engineering, Korea Aerospace University, Goyang-si, Gyeonggi-do, 412-791 (Korea, Republic of)
  4. Electronic Materials Research Center, Korea Institute of Science and Technology, Seongbuk-gu, Seoul 136-791 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22283232
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 5; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; AMORPHOUS STATE; ATOMIC FORCE MICROSCOPY; CORRELATIONS; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; GERMANIUM SELENIDES; MEMORY DEVICES; THIN FILMS