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Title: Zr/oxidized diamond interface for high power Schottky diodes

High forward current density of 10{sup 3} A/cm{sup 2} (at 6 V) and a breakdown field larger than 7.7 MV/cm for diamond diodes with a pseudo-vertical architecture, are demonstrated. The power figure of merit is above 244 MW/cm{sup 2} and the relative standard deviation of the reverse current density over 83 diodes is 10% with a mean value of 10{sup −9} A/cm{sup 2}. These results are obtained with zirconium as Schottky contacts on the oxygenated (100) oriented surface of a stack comprising an optimized lightly boron doped diamond layer on a heavily boron doped one, epitaxially grown on a Ib substrate. The origin of such performances are discussed.
Authors:
; ; ; ;  [1] ;  [2] ;  [1] ;  [2] ;  [2]
  1. Univ. Grenoble Alpes, Inst NEEL, F-38042 Grenoble (France)
  2. (France)
Publication Date:
OSTI Identifier:
22283227
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 5; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; BORON; CURRENT DENSITY; DIAMONDS; DOPED MATERIALS; EPITAXY; INTERFACES; LAYERS; SCHOTTKY BARRIER DIODES; SUBSTRATES; SURFACES; ZIRCONIUM