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Title: Native defects affecting the Li atom distribution tune the optical emission of ZnO:Li epitaxial thin film

It is found that the oxygen vacancy (V{sub O}) defect concentration affecting the separation between individual species in Li{sub Zn}-Li{sub i} complex influences the optical emission property of Li{sub 0.06}Zn{sub 0.94}O epitaxial thin film grown by pulsed laser deposition. The film grown under low oxygen partial pressure (n-type conductivity)/higher partial pressure (resistive-type) has broad emission at ∼2.99 eV/∼2.1 eV and a narrower emission at 3.63 eV/3.56 eV, respectively. First principle based mBJLDA electronic structure calculation suggests that the emission at 2.99 eV is due to the Li{sub Zn}-Li{sub i} pair complex and the emission at 2.1 eV is when the component species are away from each other.
Authors:
; ; ;  [1] ;  [2]
  1. International Centre for Materials Science, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur P.O., Bangalore 560064 (India)
  2. (India)
Publication Date:
OSTI Identifier:
22283223
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 5; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ATOMS; CONCENTRATION RATIO; ELECTRIC CONDUCTIVITY; ELECTRONIC STRUCTURE; ENERGY BEAM DEPOSITION; EPITAXY; EV RANGE; LASER RADIATION; LITHIUM; OXYGEN; PARTIAL PRESSURE; PHOTON EMISSION; PULSED IRRADIATION; THIN FILMS; VACANCIES; ZINC OXIDES