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Title: Magic angle and height quantization in nanofacets on SiC(0001) surfaces

We report on the density-functional calculations that provide microscopic mechanism of the facet formation on the SiC (0001) surface. We first identify atom-scale structures of single-, double-, and quad-bilayer steps and find that the single-bilayer (SB) step has the lowest formation energy. We then find that the SB steps are bunched to form a nanofacet with a particular angle relative to the (0001) plane (magic facet angle) and with a discretized height along the (0001) direction (height quantization). We also clarify a microscopic reason for the self-organization of the nanofacet observed experimentally.
Authors:
; ;  [1]
  1. Department of Applied Physics, The University of Tokyo, Hongo, Tokyo 113-8656 (Japan)
Publication Date:
OSTI Identifier:
22283221
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 5; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; ATOMS; CRYSTAL STRUCTURE; DENSITY FUNCTIONAL METHOD; FORMATION HEAT; LAYERS; NANOSTRUCTURES; QUANTIZATION; SILICON CARBIDES; SURFACES