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Title: Ultraviolet emission from a multi-layer graphene/MgZnO/ZnO light-emitting diode

We report on ultraviolet emission from a multi-layer graphene (MLG)/MgZnO/ZnO light-emitting diodes (LED). The p-type MLG and MgZnO in the MLG/MgZnO/ZnO LED are used as transparent hole injection and electron blocking layers, respectively. The current-voltage characteristics of the MLG/MgZnO/ZnO LED show that current transport is dominated by tunneling processes in the MgZnO barrier layer under forward bias conditions. The holes injected from p-type MLG recombine efficiently with the electrons accumulated in ZnO, and the MLG/MgZnO/ZnO LED shows strong ultraviolet emission from the band edge of ZnO and weak red-orange emission from the deep levels of ZnO.
Authors:
; ; ;  [1] ;  [2] ;  [3] ;  [1] ;  [4]
  1. School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of)
  2. Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of)
  3. Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093-0407 (United States)
  4. (Korea, Republic of)
Publication Date:
OSTI Identifier:
22283218
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 5; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; DEPLETION LAYER; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRONS; GRAPHENE; HETEROJUNCTIONS; HOLES; INTERFACES; LIGHT EMITTING DIODES; MAGNESIUM COMPOUNDS; PHOTON EMISSION; P-TYPE CONDUCTORS; TUNNEL EFFECT; ULTRAVIOLET RADIATION; ZINC OXIDES